0100043 - FZU-D 20040019 RIV CZ eng K - Conference Paper (Czech conference)
Mačkal, Adam - Hazdra, P. - Hulicius, Eduard - Pangrác, Jiří - Melichar, Karel
Lasers with thin strained InAs layers in GaAs - electroluminescence and photoabsorption at elevated temperatures.
[Lasery s napjatými tenkými InAs vrstvami v GaAs - elektroluminiscence a fotoabsorpce při zvýšených teplotách.]
Workshop 2003. Praha: ČVUT, 2003, s. 446-447.
[Workshop 2003. Praha (CZ), 10.02.2003-12.02.2003]
R&D Projects: GA AV ČR IAA1010318
Institutional research plan: CEZ:MSM 212300014
Keywords : quantum well * InAs * GaAs * electroluminescence * photoabsorption * elevated temperature
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0007551