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Lasers with thin strained InAs layers in GaAs - electroluminescence and photoabsorption at elevated temperatures
- 1.MAČKAL, Adam, HAZDRA, P., HULICIUS, Eduard, PANGRÁC, Jiří, MELICHAR, Karel. Lasers with thin strained InAs layers in GaAs - electroluminescence and photoabsorption at elevated temperatures. In: Workshop 2003. Praha: ČVUT, 2003, s. 446-447.
Number of the records: 1