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Why is it That Differently Doped Regions in Semiconductors are Visible in Low Voltage SEM?
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SYSNO ASEP 0100007 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Why is it That Differently Doped Regions in Semiconductors are Visible in Low Voltage SEM? Title Proč jsou různě dopované oblasti v polovodiči viditelné v nízko-napěťovém REM? Author(s) El Gomati, M. M. (GB)
Wells, T. C. R. (GB)
Müllerová, Ilona (UPT-D) RID, SAI, ORCID
Frank, Luděk (UPT-D) RID, SAI, ORCID
Jayakody, H. (GB)Source Title IEEE Transactions on Electron Devices - ISSN 0018-9383
Roč. 51, č. 2 (2004), s. 288-292Number of pages 5 s. Language eng - English Country US - United States Keywords doping of semiconductors ; SEM imaging ; inspection of patterns Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects IAA1065304 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) Annotation Although doped regions in semiconductors have been shown to give a different secondary electron yield in low-voltage scanning electron microscopy, the basic interpretation of this contrast has been difficult. It is accepted that this contrast stem from electronic phenomenon rather than atomic number differences between differently doped regions. However, the question is whether variations in the patch fields above the sample surface, balancing variations in the inner potentials, or surface coatings and/or surface states are the mechanisms responsible for the observed contrast. The present study reports on comparative experiments of these two models and demonstrates that the image contrast can be controlled by the presence of thin-surface metallic coatings Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2005
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