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Electroluminescence of silicon nanocrystals in p-i-n diode structures

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    0048817 - FZÚ 2007 RIV CH eng J - Journal Article
    Fojtík, A. - Valenta, J. - Stuchlíková, The-Ha - Stuchlík, Jiří - Pelant, Ivan - Kočka, Jan
    Electroluminescence of silicon nanocrystals in p-i-n diode structures.
    [Elektroluminiscence křemíkových nanokrystalů ve struktuře p-i-n diody.]
    Thin Solid Films. Roč. 515, - (2006), s. 775-777. ISSN 0040-6090. E-ISSN 1879-2731
    R&D Projects: GA MŠMT LC510; GA AV ČR IAA1010316
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : electroluminescence * silicon nanocrystals
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.666, year: 2006

    Electroluminescence is observed under forward bias exceeding 5 V and the spectrum consists of a broad band due to a large centred around 650 nm yellowish

    Elektroluminiscence byla pozorována při napětí v propustném směru 5V a emisní spektrum se skládá ze širokého pásu u 650 nm
    Permanent Link: http://hdl.handle.net/11104/0139361

     
     
Number of the records: 1  

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