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Gallium Nitride Thin Films Containing Rare Earth Ions Fabricated by Magnetron Sputtering
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SYSNO ASEP 0030825 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Gallium Nitride Thin Films Containing Rare Earth Ions Fabricated by Magnetron Sputtering Title Tenké vrstvy galium nitridu obsahující vzácné zeminy, připravené magnetronovým naprašováním Author(s) Prajzler, V. (CZ)
Huttel, I. (CZ)
Špirková, J. (CZ)
Hamáček, J. (CZ)
Machovič, V. (CZ)
Oswald, J. (CZ)
Peřina, Vratislav (UJF-V) RID
Havránek, Vladimír (UJF-V) RID, SAI, ORCIDSource Title Conference Proceedings Book. - University of Aveiro : MEDIAMIRA, Cluj-Napoca, 2005 / Ali N. ; Gracio J. ; Jakson M.J. - ISBN 973-713-065-0 Pages s. 202-204 Number of pages 2 s. Action International Conference on Surfaces, Coatings and Nanostructured Materials - nanoSMat2005 Event date 07.09.2005-09.09.2005 VEvent location Aveiro Country PT - Portugal Event type WRD Language eng - English Country PT - Portugal Keywords gallium nitride ; thin films Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders R&D Projects GA104/03/0385 GA ČR - Czech Science Foundation (CSF) GA104/03/0387 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10480505 - UJF-V (2005-2011) Annotation We report about fabrication and properties of the Rare Earth (RE) ions doped Gallium Nitride (GaN) thin films. The GaN thin films containing RE ions were deposited by magnetron sputtering. For the deposition we used gallium, gallium nitride or gallium oxide targets and argon + nitrogen gas mixture atmosphere. For the RE doping into the gallium nitride films, the RE oxide pellets, or RE powders were laid on the top of the used target. The results of the experiments were evaluated in the terms of the relations between the technology/precursors approaches and the composition and luminescence properties of the fabricated RE doped GaN layers. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2006
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