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Gallium Nitride Thin Films Containing Rare Earth Ions Fabricated by Magnetron Sputtering

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    SYSNO ASEP0030825
    Document TypeC - Proceedings Paper (int. conf.)
    R&D Document TypeConference Paper
    TitleGallium Nitride Thin Films Containing Rare Earth Ions Fabricated by Magnetron Sputtering
    TitleTenké vrstvy galium nitridu obsahující vzácné zeminy, připravené magnetronovým naprašováním
    Author(s) Prajzler, V. (CZ)
    Huttel, I. (CZ)
    Špirková, J. (CZ)
    Hamáček, J. (CZ)
    Machovič, V. (CZ)
    Oswald, J. (CZ)
    Peřina, Vratislav (UJF-V) RID
    Havránek, Vladimír (UJF-V) RID, SAI, ORCID
    Source TitleConference Proceedings Book. - University of Aveiro : MEDIAMIRA, Cluj-Napoca, 2005 / Ali N. ; Gracio J. ; Jakson M.J. - ISBN 973-713-065-0
    Pagess. 202-204
    Number of pages2 s.
    ActionInternational Conference on Surfaces, Coatings and Nanostructured Materials - nanoSMat2005
    Event date07.09.2005-09.09.2005
    VEvent locationAveiro
    CountryPT - Portugal
    Event typeWRD
    Languageeng - English
    CountryPT - Portugal
    Keywordsgallium nitride ; thin films
    Subject RIVBG - Nuclear, Atomic and Molecular Physics, Colliders
    R&D ProjectsGA104/03/0385 GA ČR - Czech Science Foundation (CSF)
    GA104/03/0387 GA ČR - Czech Science Foundation (CSF)
    CEZAV0Z10480505 - UJF-V (2005-2011)
    AnnotationWe report about fabrication and properties of the Rare Earth (RE) ions doped Gallium Nitride (GaN) thin films. The GaN thin films containing RE ions were deposited by magnetron sputtering. For the deposition we used gallium, gallium nitride or gallium oxide targets and argon + nitrogen gas mixture atmosphere. For the RE doping into the gallium nitride films, the RE oxide pellets, or RE powders were laid on the top of the used target. The results of the experiments were evaluated in the terms of the relations between the technology/precursors approaches and the composition and luminescence properties of the fabricated RE doped GaN layers.
    WorkplaceNuclear Physics Institute
    ContactMarkéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
    Year of Publishing2006
Number of the records: 1  

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