Number of the records: 1
Abrupt InAs/GaAs heterojunctions and very thin quantum wells grown by MOVPE
- 1.
SYSNO ASEP 0026669 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Abrupt InAs/GaAs heterojunctions and very thin quantum wells grown by MOVPE Title Strmé InAs/GaAs heteropřechody a velmi tenké kvantové jámy vypěstované pomocí MOVPE Author(s) Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Pacherová, Oliva (FZU-D) RID, ORCID
Oswald, Jiří (FZU-D) RID, ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Šimeček, Tomislav (FZU-D)
Melichar, Karel (FZU-D)
Petříček, Otto (FZU-D) RID
Chráska, T. (CZ)
Holý, V. (CZ)
Vávra, I. (SK)
Ouattara, L. (SE)Source Title NANO ´04. - Brno : Brno University of Technology, 2004 / Šandera P. - ISBN 80-214-2793-0 Pages s. 278-281 Number of pages 4 s. Action NANO ´04 International Conference Event date 13.10.2004-15.10.2004 VEvent location Brno Country CZ - Czech Republic Event type EUR Language eng - English Country CZ - Czech Republic Keywords semiconductor laser ; quantum well ; GaAs ; InAs ; XSTM ; TEM ; X-ray diffraction Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GP202/02/D069 GA ČR - Czech Science Foundation (CSF) GA202/03/0413 GA ČR - Czech Science Foundation (CSF) IAA1010318 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) KSK1010104 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z1010914 - FZU-D Annotation We have found that the abruptness and symmetry on monoatomic scale is achievable with MOVPE technique as well. We are able to find only the periodicity in these structures while atomic resolution pictures give reliable thickness values. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2006
Number of the records: 1