0026669 - FZÚ 2006 RIV CZ eng C - Conference Paper (international conference)
Hulicius, Eduard - Pacherová, Oliva - Oswald, Jiří - Hospodková, Alice - Pangrác, Jiří - Šimeček, Tomislav - Melichar, Karel - Petříček, Otto - Chráska, T. - Holý, V. - Vávra, I. - Ouattara, L.
Abrupt InAs/GaAs heterojunctions and very thin quantum wells grown by MOVPE.
[Strmé InAs/GaAs heteropřechody a velmi tenké kvantové jámy vypěstované pomocí MOVPE.]
NANO ´04. Brno: Brno University of Technology, 2004 - (Šandera, P.), s. 278-281. ISBN 80-214-2793-0.
[NANO ´04 International Conference. Brno (CZ), 13.10.2004-15.10.2004]
R&D Projects: GA ČR(CZ) GP202/02/D069; GA ČR(CZ) GA202/03/0413; GA AV ČR(CZ) IAA1010318; GA AV ČR(CZ) KSK1010104
Institutional research plan: CEZ:AV0Z1010914
Keywords : semiconductor laser * quantum well * GaAs * InAs * XSTM * TEM * X-ray diffraction
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0116879