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Characterization of InAs/AlSb tunelling double barrier heterostructure by reverse electron emission spectroscopy with InAs as base electrode
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SYSNO 0000388 Title Characterization of InAs/AlSb tunelling double barrier heterostructure by reverse electron emission spectroscopy with InAs as base electrode Title Charakterizace InAs/AlSb dvojite tunelove barierove heterostruktury Author(s) Vaniš, Jan (URE-Y) RID
Chow, D. H. (US)
Šroubek, Filip (URE-Y)
McGill, T. C. M. (US)
Walachová, Jarmila (URE-Y)Source Title Physica Status Solidi C : Conferences and critical reviews. Roč. 2, č. 4 (2005), s. 1444-1448 Conference EXMATEC 2004 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /7./, Montpellier, 01.06.2004-04.06.2004 Document Type Článek v odborném periodiku Grant KSK1010104 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR), CZ - Czech Republic Language eng Country DE Keywords scanning tunnelling microscopy * ballistic transport * semiconductor heterojunctions Permanent Link http://hdl.handle.net/11104/0017652
Number of the records: 1