Number of the records: 1
Characterization of InAs/AlSb tunelling double barrier heterostructure by reverse electron emission spectroscopy with InAs as base electrode
- 1.Vaniš, Jan - Chow, D. H. - Šroubek, Filip - McGill, T. C. M. - Walachová, Jarmila
Characterization of InAs/AlSb tunelling double barrier heterostructure by reverse electron emission spectroscopy with InAs as base electrode.
Physica Status Solidi C. Roč. 2, č. 4 (2005), s. 1444-1448. ISSN 1610-1634.
[EXMATEC 2004 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /7./. Montpellier, 01.06.2004-04.06.2004]
http://hdl.handle.net/11104/0017652
Number of the records: 1