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High polarization and wake-up free ferroelectric characteristics in ultrathin Hf.sub.0.5./sub.Zr.sub.0.5./sub.O.sub.2./sub. devices by control of oxygen-deficient layer
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SYSNO 0553457 Title High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layer Author(s) Yadav, M. (KR)
Kashir, Alireza (FZU-D) ORCID
Oh, S. (KR)
Nikam, R.D. (KR)
Kim, H. (KR)
Jang, H. (KR)
Hwang, H. (KR)Source Title Nanotechnology. Roč. 33, č. 8 (2022). - : Institute of Physics Publishing Article number 085206 Document Type Článek v odborném periodiku Institutional support FZU-D - RVO:68378271 Language eng Country GB Keywords interfacial layer * annealing temperature * remnant polarization * sub-5 nm HZO * wakeup free * TEM * XPS URL https://doi.org/10.1088/1361-6528/ac3a38 Permanent Link http://hdl.handle.net/11104/0330727 File Download Size Commentary Version Access 0553457AP.pdf 1 1.1 MB Author’s postprint open-access
Number of the records: 1