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High polarization and wake-up free ferroelectric characteristics in ultrathin Hf.sub.0.5./sub.Zr.sub.0.5./sub.O.sub.2./sub. devices by control of oxygen-deficient layer
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SYSNO ASEP 0553457 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layer Author(s) Yadav, M. (KR)
Kashir, Alireza (FZU-D) ORCID
Oh, S. (KR)
Nikam, R.D. (KR)
Kim, H. (KR)
Jang, H. (KR)
Hwang, H. (KR)Number of authors 7 Article number 085206 Source Title Nanotechnology. - : Institute of Physics Publishing - ISSN 0957-4484
Roč. 33, č. 8 (2022)Number of pages 10 s. Language eng - English Country GB - United Kingdom Keywords interfacial layer ; annealing temperature ; remnant polarization ; sub-5 nm HZO ; wakeup free ; TEM ; XPS Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) Method of publishing Open access with time embargo (19.02.2023) Institutional support FZU-D - RVO:68378271 UT WOS 000725856400001 EID SCOPUS 85121828452 DOI 10.1088/1361-6528/ac3a38 Annotation The formation of an interfacial layer is believed to affect the ferroelectric properties in HfO2 based ferroelectric devices. The atomic layer deposited devices continue suffering from a poor bottom interfacial condition, since the formation of bottom interface is severely affected by atomic layer deposition and annealing process. Herein, the formation of bottom interfacial layer was controlled through deposition of different bottom electrodes (BE) in device structure W/ HZO/BE. The transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy analyses done on devices W/HZO/W and W/HZO/IrOx suggest the strong effect of IrOx in controlling bottom interfacial layer formation while W/HZO/W badly suffers from interfacial layer formation. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2023 Electronic address https://doi.org/10.1088/1361-6528/ac3a38
Number of the records: 1