High polarization and wake-up free ferroelectric characteristics in ultrathin Hf.sub.0.5./sub.Zr.sub.0.5./sub.O.sub.2./sub. devices by control of oxygen-deficient layer

0553457 - FZÚ 2023 RIV GB eng J - Journal Article
Yadav, M. - Kashir, Alireza - Oh, S. - Nikam, R.D. - Kim, H. - Jang, H. - Hwang, H.
High polarization and wake-up free ferroelectric characteristics in ultrathin Hf_0.5Zr_0.5O₂ devices by control of oxygen-deficient layer.
Nanotechnology. Roč. 33, č. 8 (2022), č. článku 085206. ISSN 0957-4484. E-ISSN 1361-6528
Institutional support: RVO:68378271
Keywords : interfacial layer * annealing temperature * remnant polarization * sub-5 nm HZO * wakeup free * TEM * XPS
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.5, year: 2022
Method of publishing: Open access with time embargo
https://doi.org/10.1088/1361-6528/ac3a38
Permanent Link: http://hdl.handle.net/11104/0330727