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Front-side diamond deposition on the GaN membranes
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SYSNO ASEP 0540751 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Front-side diamond deposition on the GaN membranes Author(s) Izsák, Tibor (FZU-D) ORCID
Vanko, G. (SK)
Držík, M. (SK)
Kasemann, S. (AT)
Zehetner, J. (AT)
Vojs, M. (SK)
Zaťko, B. (SK)
Potocký, Štěpán (FZU-D) RID, ORCID
Kromka, Alexander (FZU-D) RID, ORCID, SAINumber of authors 9 Source Title Proceedings of the 13th International Conference on Advanced Semiconductor Devices And Microsystems. - New York : IEEE, 2020 / Vanko G. ; Izsák T. - ISBN 978-1-7281-9776-0 Pages s. 42-45 Number of pages 4 s. Publication form Online - E Action International Conference on Advanced Semiconductor Devices And Microsystems - (ASDAM) /13./ Event date 11.10.2020 - 14.10.2020 VEvent location Smolenice Country SK - Slovakia Event type WRD Language eng - English Country US - United States Keywords diamond ; GaN ; CVD ; stress Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LM2018110 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) 8X20035 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 Annotation We present technological issues in the deposition of diamond films on the GaN membranes. Many wrinkles and the thicker diamond layer were observed at the membrane centre and poor quality diamond outside the membrane area. The deflection of the membranes were analyzed by a bulging method using white light interferometry. The membrane bending was discussed in the terms of temperature gradient and mismatch of thermal expansion coefficients of materials. Optimized technological procedure was proposed to obtain both-side diamond-coated GaN membranes with minimized effect of wrinkling and induced residual stress. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2021
Number of the records: 1