Number of the records: 1  

Front-side diamond deposition on the GaN membranes

  1. 1.
    0540751 - FZÚ 2021 RIV US eng C - Conference Paper (international conference)
    Izsák, Tibor - Vanko, G. - Držík, M. - Kasemann, S. - Zehetner, J. - Vojs, M. - Zaťko, B. - Potocký, Štěpán - Kromka, Alexander
    Front-side diamond deposition on the GaN membranes.
    Proceedings of the 13th International Conference on Advanced Semiconductor Devices And Microsystems. New York: IEEE, 2020 - (Vanko, G.; Izsák, T.), s. 42-45. ISBN 978-1-7281-9776-0.
    [International Conference on Advanced Semiconductor Devices And Microsystems - (ASDAM) /13./. Smolenice (SK), 11.10.2020-14.10.2020]
    R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) 8X20035; GA MŠMT(CZ) EF16_019/0000760
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Institutional support: RVO:68378271
    Keywords : diamond * GaN * CVD * stress
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Permanent Link: http://hdl.handle.net/11104/0318357
     
     
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.