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Nanostructures in various Au ion-implanted ZnO facets modified using energetic O ions
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SYSNO ASEP 0536509 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Nanostructures in various Au ion-implanted ZnO facets modified using energetic O ions Author(s) Macková, Anna (UJF-V) RID, ORCID, SAI
Jagerová, Adéla (UJF-V) ORCID, SAI
Malinský, Petr (UJF-V) RID, ORCID, SAI
Cutroneo, Mariapompea (UJF-V) ORCID, RID, SAI
Flaks, Josef (UJF-V)
Nekvindová, P. (CZ)
Michalcová, A. (CZ)
Holý, V. (CZ)
Košutová, T. (CZ)Number of authors 9 Source Title Physical Chemistry Chemical Physics. - : Royal Society of Chemistry - ISSN 1463-9076
Roč. 22, č. 41 (2020), s. 23563-23573Number of pages 11 s. Publication form Print - P Language eng - English Country GB - United Kingdom Keywords ion-implantation ; RBS-C ; Raman spectroscopy Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders OECD category Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect) R&D Projects EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA18-03346S GA ČR - Czech Science Foundation (CSF) Method of publishing Limited access Institutional support UJF-V - RVO:61389005 UT WOS 000582937400008 EID SCOPUS 85094932404 DOI 10.1039/d0cp04119j Annotation Noble metal nanoparticles dispersed in semiconductors, mainly in ZnO, have been intensively investigated. Au dispersion and possible precipitation as well as damage growth were studied in ZnO of various orientations, a-plane (1120) and c-plane (0001), using 1 MeV Au+-ion implantation with an ion fluence of 1.5 x 10(16) cm(-2) and subsequently annealed at 600 degrees C in an ambient atmosphere for one hour. Afterwards, irradiation with 10 MeV O3+ at a fluence of 5 x 10(14) cm(-2) was used to modify Au distribution and internal morphology as well as to follow the structural modification of ZnO under high-energy light-ion irradiation. Rutherford backscattering spectrometry in the channelling mode (RBS-C) and Raman spectroscopy show that O irradiation with high electronic energy transfer distinctly modifies the implanted Au layer in various ZnO facets. It introduces additional displacement and disorder in the O sublattice mainly in the a-plane while not creating an additional strain in this facet. This has been confirmed by XRD analysis, identifying the appearance of an additional phase (nanocrystallites) after Au implantation, which diminishes after O irradiation, and RBS-C has identified decreased disorder in the Zn-sublattice. Unlike in c-plane ZnO, it has been possible to observe a local compressive deformation around spherical defects, which is more pronounced after O irradiation simultaneously with the vertical strain introduced in the Au-implanted and annealed layer. Transmission electron microscopy (TEM) with energy dispersive spectroscopy (EDS) was employed to investigate the interior morphology, showing the occurrence of Au-hcp clusters of the small sizes of about 4-10 nm, neither the cluster sizes nor their shapes are significantly affected by the O irradiation. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2021 Electronic address https://doi.org/10.1039/D0CP04119J
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