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Temperature dependence of the urbach energy in lead iodide perovskites

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    SYSNO ASEP0520320
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleTemperature dependence of the urbach energy in lead iodide perovskites
    Author(s) Ledinský, Martin (FZU-D) RID, ORCID, SAI
    Schönfeldová, Tereza (FZU-D)
    Holovský, Jakub (FZU-D) RID, ORCID
    Aydin, E. (SA)
    Hájková, Zdeňka (FZU-D) RID, ORCID
    Landová, Lucie (FZU-D) ORCID
    Neykova, Neda (FZU-D) RID, ORCID
    Fejfar, Antonín (FZU-D) RID, ORCID, SAI
    De Wolf, S. (SA)
    Number of authors9
    Source TitleJournal of Physical Chemistry Letters. - : American Chemical Society - ISSN 1948-7185
    Roč. 10, č. 6 (2019), s. 1368-1373
    Number of pages6 s.
    Languageeng - English
    CountryUS - United States
    Keywordsoptical-absorption edge ; solar-cells ; photocurrent spectroscopy ; electronic-structure ; halide perovskites ; disorder limit
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsEF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    GJ17-26041Y GA ČR - Czech Science Foundation (CSF)
    Method of publishingLimited access
    Institutional supportFZU-D - RVO:68378271
    UT WOS000463678800032
    EID SCOPUS85063131062
    DOI10.1021/acs.jpclett.9b00138
    AnnotationTo gain insight into the properties of photovoltaic and light-emitting materials, detailed information about their optical absorption spectra is essential. Here, we elucidate the temperature dependence of such spectra for methylammonium lead iodide (CH3NH3PbI3), with specific attention to its sub-band gap absorption edge (often termed Urbach energy). On the basis of these data, we first find clear further evidence for the universality of the correlation between the Urbach energy and open-circuit voltage losses of solar cells. Second, we find that for CH3NH3PbI3 the static, temperature-independent, contribution of the Urbach energy is 3.8 ± 0.7 meV, which is smaller than that of crystalline silicon (Si), gallium arsenide (GaAs), indium phosphide (InP), or gallium nitride (GaN), underlining the remarkable optoelectronic properties of perovskites.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2020
    Electronic addresshttps://doi.org/10.1021/acs.jpclett.9b00138
Number of the records: 1  

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