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Temperature dependence of the urbach energy in lead iodide perovskites
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SYSNO ASEP 0520320 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Temperature dependence of the urbach energy in lead iodide perovskites Author(s) Ledinský, Martin (FZU-D) RID, ORCID, SAI
Schönfeldová, Tereza (FZU-D)
Holovský, Jakub (FZU-D) RID, ORCID
Aydin, E. (SA)
Hájková, Zdeňka (FZU-D) RID, ORCID
Landová, Lucie (FZU-D) ORCID
Neykova, Neda (FZU-D) RID, ORCID
Fejfar, Antonín (FZU-D) RID, ORCID, SAI
De Wolf, S. (SA)Number of authors 9 Source Title Journal of Physical Chemistry Letters. - : American Chemical Society - ISSN 1948-7185
Roč. 10, č. 6 (2019), s. 1368-1373Number of pages 6 s. Language eng - English Country US - United States Keywords optical-absorption edge ; solar-cells ; photocurrent spectroscopy ; electronic-structure ; halide perovskites ; disorder limit Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GJ17-26041Y GA ČR - Czech Science Foundation (CSF) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000463678800032 EID SCOPUS 85063131062 DOI 10.1021/acs.jpclett.9b00138 Annotation To gain insight into the properties of photovoltaic and light-emitting materials, detailed information about their optical absorption spectra is essential. Here, we elucidate the temperature dependence of such spectra for methylammonium lead iodide (CH3NH3PbI3), with specific attention to its sub-band gap absorption edge (often termed Urbach energy). On the basis of these data, we first find clear further evidence for the universality of the correlation between the Urbach energy and open-circuit voltage losses of solar cells. Second, we find that for CH3NH3PbI3 the static, temperature-independent, contribution of the Urbach energy is 3.8 ± 0.7 meV, which is smaller than that of crystalline silicon (Si), gallium arsenide (GaAs), indium phosphide (InP), or gallium nitride (GaN), underlining the remarkable optoelectronic properties of perovskites. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2020 Electronic address https://doi.org/10.1021/acs.jpclett.9b00138
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