Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions

Number of the records: 1

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SYSNO	0508842
Title	Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions
Author(s)	Mikšová, Romana (UJF-V) [ONF]_{RID, ORCID, SAI} Horák, Pavel (UJF-V) [ONF]_{RID, ORCID} Holý, V. (CZ) Macková, Anna (UJF-V) [ONF]_{RID, ORCID, SAI}
Source Title	Surface and Interface Analysis. Roč. 51, č. 11 (2019), s. 1113-1120. - : Wiley
Document Type	Článek v odborném periodiku
Grant	GA18-03346S GA ČR - Czech Science Foundation (CSF)
	EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
Institutional support	UJF-V - RVO:61389005
Language	eng
Country	US
Keywords	ion implantation of Si * ion channelling in a crystal material * heavy ions implantation * structural modification of an ion-implanted silicon crystal
Cooperating institutions	Univerzita Karlova v Praze (Czech Republic) Univerzita Jana Evangelisty Purkyně v Ústí nad Labem (Czech Republic)
URL	https://doi.org/10.1002/sia.6698
Permanent Link	http://hdl.handle.net/11104/0300721

Number of the records: 1