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Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions

  1. 1.
    Mikšová, Romana - Horák, Pavel - Holý, V. - Macková, Anna
    Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions.
    Surface and Interface Analysis. Roč. 51, č. 11 (2019), s. 1113-1120. ISSN 0142-2421. E-ISSN 1096-9918
    OECD category: Nuclear physics
    Impact factor: 1.665, year: 2019
    Method of publishing: Limited access
    https://doi.org/10.1002/sia.6698
    http://hdl.handle.net/11104/0300721
Number of the records: 1  

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