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Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions
- 1.MIKŠOVÁ, Romana, HORÁK, Pavel, HOLÝ, V., MACKOVÁ, Anna. Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions. Surface and Interface Analysis. 2019, 51(11), 1113-1120. ISSN 0142-2421. E-ISSN 1096-9918. Available: doi: 10.1002/sia.6698.
Number of the records: 1