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Investigation of Boron containing AlN and AlGaN layers grown by MOVPE

  1. 1.
    SYSNO0495805
    TitleInvestigation of Boron containing AlN and AlGaN layers grown by MOVPE
    Author(s) Rettig, O. (DE)
    Scholz, J.P. (DE)
    Steiger, N. (DE)
    Bauer, S. (DE)
    Hubáček, Tomáš (FZU-D) ORCID
    Zíková, Markéta (FZU-D) RID
    Li, Y. (DE)
    Qi, H. (DE)
    Biskupek, J. (DE)
    Kaiser, U. (DE)
    Thonke, K. (DE)
    Scholz, F. (DE)
    Source Title Physica Status Solidi B : Basic Solid State Physics. Roč. 255, č. 5 (2018), s. 1-9. - : Wiley
    Article number1700510
    Document TypeČlánek v odborném periodiku
    Institutional supportFZU-D - RVO:68378271
    Languageeng
    CountryDE
    Keywords boron nitrides * AIBN * AIBGaN * TEM * XRD * heterostructure
    Permanent Linkhttp://hdl.handle.net/11104/0289786
     
Number of the records: 1  

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