Investigation of Boron containing AlN and AlGaN layers grown by MOVPE

Number of the records: 1

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014		$a 85044235353 $2 SCOPUS
014		$a 000432028400032 $2 WOS
017		$a 10.1002/pssb.201700510 $2 DOI
100		$a 20181102d m y slo 03 ba
101		$a eng
102		$a DE
200	1-	$a Investigation of Boron containing AlN and AlGaN layers grown by MOVPE
215		$a 9 s.
463	-1	$1 001 cav_un_epca0257422 $1 011* $a 0370-1972 $e 1521-3951 $1 200 1 $a Physica Status Solidi B $e Basic Solid State Physics $v Roč. 255, č. 5 (2018), s. 1-9 $1 210 $c Wiley
610		$a boron nitrides
610		$a AIBN
610		$a AIBGaN
610		$a TEM
610		$a XRD
610		$a heterostructure
700	-1	$3 cav_un_auth*0351271 $a Rettig $b O. $y DE
701	-1	$3 cav_un_auth*0351273 $a Scholz $b J.P. $y DE
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701	-1	$3 cav_un_auth*0334462 $a Hubáček $b Tomáš $i Polovodiče $j Semiconductors $p FZU-D $w Semiconductors $T Fyzikální ústav AV ČR, v. v. i.
701	-1	$3 cav_un_auth*0285811 $a Zíková $b Markéta $i Polovodiče $j Semiconductors $p FZU-D $T Fyzikální ústav AV ČR, v. v. i.
701	-1	$3 cav_un_auth*0083374 $a Li $b Y. $y DE
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701	-1	$3 cav_un_auth*0039137 $a Scholz $b F. $y DE

Number of the records: 1