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Investigation of Boron containing AlN and AlGaN layers grown by MOVPE
- 1.Rettig, O., Scholz, J.P., Steiger, N., Bauer, S., Hubáček, T., Zíková, M., Li, Y., Qi, H., Biskupek, J., Kaiser, U., Thonke, K., Scholz, F. Investigation of Boron containing AlN and AlGaN layers grown by MOVPE. Physica Status Solidi B. 2018, 255(5), 1-9), 1700510. ISSN 0370-1972. E-ISSN 1521-3951. Available: doi: 10.1002/pssb.201700510
Number of the records: 1