Number of the records: 1
Exciton-polartion edge of GaAs: MBE layers between multiple-quantum-well structures
- 1.0130822 - FZU-D 960227 RIV GB eng J - Journal Article
Humlíček, J. - Bočánek, L. - Navrátil, K. - Pánek, P. - Švehla, R. - Košut, Jaroslav
Exciton-polartion edge of GaAs: MBE layers between multiple-quantum-well structures.
Solid State Communications. Roč. 93, č. 9 (1995), s. 725-728. ISSN 0038-1098. E-ISSN 1879-2766
R&D Projects: GA ČR GA202/93/2119
Impact factor: 1.337, year: 1995
Permanent Link: http://hdl.handle.net/11104/0028930
Number of the records: 1