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Enhanced thermoelectric performance of InTe through Pb doping
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SYSNO ASEP 0552125 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Enhanced thermoelectric performance of InTe through Pb doping Author(s) Misra, S. (FR)
Léon, A. (FR)
Levinský, Petr (FZU-D) RID, ORCID
Hejtmánek, Jiří (FZU-D) RID, ORCID
Lenoir, B. (FR)
Candolfi, C. (FR)Number of authors 6 Source Title Journal of Materials Chemistry C. - : Royal Society of Chemistry - ISSN 2050-7526
Roč. 9, č. 40 (2021), s. 14490-14496Number of pages 7 s. Language eng - English Country GB - United Kingdom Keywords thermoelectric measurements, ; chalcogenide semiconductors ; Pb doping Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects GA18-12761S GA ČR - Czech Science Foundation (CSF) LM2018096 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000704011600001 EID SCOPUS 85118121672 DOI 10.1039/d1tc04069c Annotation Chalcogenide semiconductors continue to be of prime interest for designing novel efficient materials for energy-conversion applications. Among them, the narrow-band-gap p-type semiconductor InTe exhibits high thermoelectric performance that mostly stems from its poor ability to transport heat. Here, we show that its thermoelectric figure of merit can be further enhanced by finely tuning the hole concentration through Pb doping. X-ray diffraction and scanning electron microscopy performed on the polycrystalline series In1-xPbxTe confirm that Pb substitutes for In with an estimated solubility limit below 1%. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2022 Electronic address https://doi.org/10.1039/d1tc04069c
Number of the records: 1