Number of the records: 1  

Laser and ion beams graphene oxide reduction for microelectronic devices

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    SYSNO ASEP0523925
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleLaser and ion beams graphene oxide reduction for microelectronic devices
    Author(s) Torrisi, L. (IT)
    Havránek, Vladimír (UJF-V) RID, SAI, ORCID
    Torrisi, Alfio (UJF-V) RID, ORCID
    Cutroneo, Mariapompea (UJF-V) ORCID, RID, SAI
    Silipigni, L. (IT)
    Number of authors5
    Source TitleRadiation Effects and Defects in Solids. - : Taylor & Francis - ISSN 1042-0150
    Roč. 175, 3-4 (2020), s. 226-240
    Number of pages15 s.
    Publication formPrint - P
    Languageeng - English
    CountryGB - United Kingdom
    KeywordsGraphene oxide ; ion beam reduction ; lithography ; laser ; ion beam ; electronic device
    Subject RIVBL - Plasma and Gas Discharge Physics
    OECD categoryFluids and plasma physics (including surface physics)
    R&D ProjectsLM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    GA19-02482S GA ČR - Czech Science Foundation (CSF)
    Method of publishingLimited access
    Institutional supportUJF-V - RVO:61389005
    UT WOS000522130000002
    EID SCOPUS85082713888
    DOI10.1080/10420150.2019.1701456
    AnnotationReduced graphene oxide (rGO) is a two-dimensional material, which is attracting increasing attention due to its special properties. It can be obtained by laser or ion beam irradiations of pristine graphene oxide (GO). It shows high mechanical resistance, considerable electric and thermal conductivity. All these rGO characteristics together with the high number of molecular species that can be embedded between its layers, make graphene oxide a potential material for electronic sensors or efficient support on which conductive strips, condensers, and micrometric electronic devices can be designed. In particular, as it is described in this paper, it is possible to carry out high spatial resolution lithography in GO by using a focused laser or micro ion beam in order to design macro, micro, and submicron geometrical structures. The use of the reduced graphene oxide for the laser and ion beam fabrication of electrical resistances and capacitances is presented.
    WorkplaceNuclear Physics Institute
    ContactMarkéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
    Year of Publishing2021
    Electronic addresshttps://doi.org/10.1080/10420150.2019.1701456
Number of the records: 1  

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