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MOVPE GaN/AlGaN HEMT nano-structures
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SYSNO ASEP 0522076 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title MOVPE GaN/AlGaN HEMT nano-structures Author(s) Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Kuldová, Karla (FZU-D) RID, ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Dominec, Filip (FZU-D) RID, ORCID
Humlíček, J. (CZ)
Pelant, Ivan (FZU-D) RID, ORCID, SAI
Cibulka, Ondřej (FZU-D) RID
Herynková, Kateřina (FZU-D) RIDNumber of authors 9 Source Title NANOCON 2018 : Conference Proceedings of the International Conference on Nanomaterials - Research & Application /10./. - Ostrava : Tanger Ltd., 2019 / Shrbená J. - ISBN 978-80-87294-89-5 Pages s. 30-35 Number of pages 5 s. Publication form Print - P Action NANOCON 2018 -International Conference on Nanomaterials - Research and Application /10./ Event date 17.10.2018 - 19.10.2018 VEvent location Brno Country CZ - Czech Republic Event type EUR Language eng - English Country CZ - Czech Republic Keywords GaN ; MOVPE ; HEMT Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects TH02010014 GA TA ČR - Technology Agency of the Czech Republic (TA ČR) LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 UT WOS 000513131900004 EID SCOPUS 85063000843 Annotation GaN/AlGaN-based high electron mobility transistors (HEMTs) attain better performance than their state-of-the-art full silicon-based counterparts do, offering higher power, higher frequency as well as higher temperature of operation and stability, although their voltage and current limits are somewhat lower than for the SiC-based HEMTs. GaN/AlGaN-based HEMTs are a potential choice for electric-powered vehicles, for which they are approved not only for their power parameters, but also for their good temperature stability, lifetime and reliability. It is important to optimize HEMT structures and their growth parameters to reach the optimum function for the real-world applications. HEMT structures were grown by MOVPE technology in AIXTRON apparatus on (111)-oriented single-surface polished Si substrates. Structural, optical and transport properties of the structures were measured by X-ray diffraction, optical reflectivity, time-resolved photoluminescence and micro-Raman spectroscopy.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2020
Number of the records: 1