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Electrical and optical characteristics of boron doped nanocrystalline diamond films
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SYSNO ASEP 0511026 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Electrical and optical characteristics of boron doped nanocrystalline diamond films Author(s) Stuchlíková, The-Ha (FZU-D) RID, ORCID
Remeš, Zdeněk (FZU-D) RID, ORCID
Mortet, Vincent (FZU-D) RID, ORCID
Taylor, Andrew (FZU-D) RID, ORCID
Ashcheulov, Petr (FZU-D) ORCID, RID
Stuchlík, Jiří (FZU-D) RID, ORCID
Volodin, V.A. (RU)Number of authors 7 Article number 108813 Source Title Vacuum. - : Elsevier - ISSN 0042-207X
Roč. 168, Oct (2019), s. 1-4Number of pages 4 s. Language eng - English Country GB - United Kingdom Keywords Raman spectroscopy ; boron doped diamond ; photothermal deflection spectroscopy Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA17-05259S GA ČR - Czech Science Foundation (CSF) Fellowship J. E. Purkyně GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000490044200006 EID SCOPUS 85069544376 DOI 10.1016/j.vacuum.2019.108813 Annotation Boron doped diamond is a prospective material which can be used as a conductive and optically transparent thin-film electrode in a variety of optoelectronic applications. In this work, we present the results of the temperature resolved electrical conductivity, optical reflection, transmission and absorption of thin boron doped nanocrystalline diamond films grown by a microwave plasma enhanced chemical vapor deposition. Optical transmittance, reflectance and absorptance properties of layers were studied by a photo-thermal deflection spectroscopy analysis. Raman spectroscopy with various excitation wavelengths was employed for the analysis of nanocrystalline diamond layers. The measured position, shift and broadening of the characteristic boron doped diamond Raman lines were used for the determination of the boron concentration. Correlation between the results of the atomic boron concentration estimated via the Raman analysis and measured electrical conductivity values is presented.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2020 Electronic address https://doi.org/10.1016/j.vacuum.2019.108813
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