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The Structural and Compositional Changes of Graphene Oxide Induced by Irradiation With 500keV Helium and Gallium Ions
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SYSNO ASEP 0507405 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title The Structural and Compositional Changes of Graphene Oxide Induced by Irradiation With 500keV Helium and Gallium Ions Author(s) Malinský, Petr (UJF-V) RID, ORCID, SAI
Macková, Anna (UJF-V) RID, ORCID, SAI
Floriánová, Markéta (UJF-V)
Cutroneo, Mariapompea (UJF-V) ORCID, RID, SAI
Hnatowicz, Vladimír (UJF-V) RID
Boháčová, M. (CZ)
Szokolova, K. (CZ)
Bottger, R. (DE)
Sofer, Z. (CZ)Number of authors 9 Article number 180409 Source Title Physica Status Solidi B : Basic Solid State Physics. - : Wiley - ISSN 0370-1972
Roč. 256, č. 5 (2019)Number of pages 8 s. Publication form Print - P Action Symposium K on Defect-Induced Effects in Nanomaterials at the Meeting of the European-Materials-Research-Society Event date 17.06.2018 - 22.06.2018 VEvent location Strasbourg Country FR - France Event type EUR Language eng - English Country DE - Germany Keywords chemical properties ; electrical properties ; graphen oxide ; ion irradiation Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA16-05167S GA ČR - Czech Science Foundation (CSF) EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Method of publishing Limited access Institutional support UJF-V - RVO:61389005 UT WOS 000476946300025 EID SCOPUS 85059163075 DOI 10.1002/pssb.201800409 Annotation Structural and compositional modification of 2D materials as graphene or graphene oxide (GO) are topical objects of nowadays due to their many technological applications. Ion irradiation of graphene based materials, as a method for improvement of their surface properties started recently. Ion mass, energy, and fluence are crucial for forming of GO electrical, optical, and mechanical properties. In this work, the GO films are irradiated with 500keV He and Ga ions to different fluences. The ions with different masses and electronic/nuclear stopping power ratios, are chosen with the aim to examine mechanisms of radiation defect creation. The elemental composition of the GO is investigated using Rutherford back-scattering (RBS) and elastic recoil detection analysis (ERDA) techniques. The structural and chemical changes are characterized by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy and the electrical properties are determined by two-point method. The RBS and ERDA analyses indicate deoxygenation and dehydrogenation of the irradiated GO surface. The thickness and the degree of O and H depletion depend on the ion mass. XPS and Raman spectroscopy show removal of oxygen functionalities and structural modifications leading to a decrease in the surface resistivity. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2020 Electronic address https://doi.org/10.1002/pssb.201800409
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