Sensitivity of encapsulated diamond-protein transistor renewed by low temperature hydrogen plasma

0392280 - FZÚ 2014 RIV CS eng J - Journal Article
Krátká, Marie - Neykova, Neda - Ukraintsev, Egor - Kromka, Alexander - Rezek, Bohuslav
Sensitivity of encapsulated diamond-protein transistor renewed by low temperature hydrogen plasma.
International Journal of Electrochemical Science. Roč. 8, č. 2 (2013), s. 1598-1608. ISSN 1452-3981. E-ISSN 1452-3981
R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GAP108/12/0996; GA ČR GD202/09/H041
Institutional support: RVO:68378271
Keywords : nanocrystalline diamond * solution-gated field-effect transistor * low temperature hydrogen termination * proteins * encapsulation
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.956, year: 2013
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We study effects of low temperature hydrogen plasma treatment (200 – 300 °C) done in two different microwave plasma reactors (linear and focused plasma) on functionality of diamond solution-gated field-effect transistors (FET) covered with various encapsulation (ma-P, OFPR, SU8, Si3N4) and with proteins adsorbed on the gate. Three-dimensional transistor microstructures (20 μm) are made of nanocrystalline hydrogen terminated intrinsic diamond that is grown on Si/SiO2 substrates by selective seeding and microwave plasma CVD growth. The hydrogen-plasma treatment in linear plasma system at 200 °C removes the proteins from the gate as evidenced by atomic force microscopy, keeps the FET fully operational, and renews solution-gated FET sensitivity to protein adsorption (unlike rinsing in solutions) as evidenced by reproducible shift of transfer characteristics by -30 mV.
Permanent Link: http://hdl.handle.net/11104/0221189