Number of the records: 1
Interface engineering for improved growth of GaSb on Si(111)
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SYSNO 0370546 Title Interface engineering for improved growth of GaSb on Si(111) Author(s) Proessdorf, A. (DE)
Grosse, F. (DE)
Romanyuk, Olexandr (FZU-D) RID, ORCID
Braun, W. (DE)
Jenichen, B. (DE)
Trampert, A. (DE)
Riechert, H. (DE)Source Title Journal of Crystal Growth. Roč. 213, č. 1 (2011), 401-404. - : Elsevier Document Type Článek v odborném periodiku Grant Common Project AV CR - DFG, DE - Germany CEZ AV0Z10100521 - FZU-D (2005-2011) Language eng Country NL Keywords defects * RHEED * XRD * MBE * antimonides * III-V semiconductors Permanent Link http://hdl.handle.net/11104/0204326
Number of the records: 1