Number of the records: 1
Interface engineering for improved growth of GaSb on Si(111)
- 1.Proessdorf, A. - Grosse, F. - Romanyuk, Olexandr - Braun, W. - Jenichen, B. - Trampert, A. - Riechert, H.
Interface engineering for improved growth of GaSb on Si(111).
Journal of Crystal Growth. Roč. 213, č. 1 (2011), 401-404. ISSN 0022-0248. E-ISSN 1873-5002
Impact factor: 1.726, year: 2011
http://hdl.handle.net/11104/0204326
Number of the records: 1