Number of the records: 1
Interface engineering for improved growth of GaSb on Si(111)
- 1.0370546 - FZÚ 2012 RIV NL eng J - Journal Article
Proessdorf, A. - Grosse, F. - Romanyuk, Olexandr - Braun, W. - Jenichen, B. - Trampert, A. - Riechert, H.
Interface engineering for improved growth of GaSb on Si(111).
Journal of Crystal Growth. Roč. 213, č. 1 (2011), 401-404. ISSN 0022-0248. E-ISSN 1873-5002
Grant - others:AV CR - DFG(DE) Common Project AV CR - DFG
Institutional research plan: CEZ:AV0Z10100521
Keywords : defects * RHEED * XRD * MBE * antimonides * III-V semiconductors
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.726, year: 2011
Permanent Link: http://hdl.handle.net/11104/0204326
Number of the records: 1