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Interface engineering for improved growth of GaSb on Si(111)
- 1.PROESSDORF, A., GROSSE, F., ROMANYUK, O., BRAUN, W., JENICHEN, B., TRAMPERT, A., RIECHERT, H. Interface engineering for improved growth of GaSb on Si(111). Journal of Crystal Growth. 2011, 213(1), 401-404. ISSN 0022-0248. E-ISSN 1873-5002. Available: doi: 10.1016/j.jcrysgro.2010.11.167
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