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Lateral shape of InAs/GaAs quantum dots in vertically correlated structures grown by MOVPE
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SYSNO ASEP 0085194 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Lateral shape of InAs/GaAs quantum dots in vertically correlated structures grown by MOVPE Title Laterální tvar InAs/GaAs kvantových teček ve vertikálně korelovaných strukturách připravených pomocí MOVPE Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Křápek, V. (CZ)
Mates, Tomáš (FZU-D) RID, ORCID
Kuldová, Karla (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Melichar, Karel (FZU-D)
Humlíček, J. (CZ)
Šimeček, Tomislav (FZU-D)Source Title Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248
Roč. 298, - (2007), s. 570-573Number of pages 4 s. Language eng - English Country NL - Netherlands Keywords nanostructures ; MOVPE ; arsenides ; semiconducting III-V materials Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects KJB101630601 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) GA202/06/0718 GA ČR - Czech Science Foundation (CSF) GA202/05/0242 GA ČR - Czech Science Foundation (CSF) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LC06040 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z10100521 - FZU-D (2005-2011) Annotation We studied shape of quantum dots in vertically correlated quantum dots where several layers of QDs (VCQDs) were grown. We try to expain the mechanism of changing lateral shape of VCQDs Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2008
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