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Electronic and mechanical response of graphene on BaTiO.sub.3./sub. at martensitic phase transitions
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SYSNO ASEP 0580117 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Electronic and mechanical response of graphene on BaTiO3 at martensitic phase transitions Author(s) Verhagen, Timotheus (FZU-D) ORCID
Valeš, V. (CZ)
Kalbáč, M. (CZ)
Vejpravová, Jana (FZU-D) RID, ORCIDNumber of authors 4 Article number 085001 Source Title Journal of Physics-Condensed Matter. - : Institute of Physics Publishing - ISSN 0953-8984
Roč. 30, č. 8 (2018)Number of pages 7 s. Language eng - English Country US - United States Keywords BaTiO3 ; graphene ; stain ; phase transition Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects GA15-01953S GA ČR - Czech Science Foundation (CSF) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000424017500001 EID SCOPUS 85041901650 DOI 10.1088/1361-648X/aaa8b7 Annotation In our work, we report on changes of strain and doping in graphene grown by chemical vapor deposition on copper and transferred onto a BaTiO3(1 0 0) (BTO) single-crystal. The BTO is known as a ferroelectric material, which undergoes several thermoelastic martensitic phase transitions when it is cooled from 300 K to 10 K. In order to enhance the very weak Raman signal of the graphene monolayer (ML) on the BTO, a 15 nm thin gold layer was deposited on top of the graphene ML to benefit from the surface enhanced Raman scattering. Using temperature dependent Raman spectral mapping, the principal Raman modes (D, G and 2D) of the graphene ML were followed in situ. From a careful analysis of these Raman modes, we conclude that the induced strain and doping of the graphene ML follows the martensitic phase transitions of the BTO crystal. Our study suggests potential exploitation of the graphene as a highly sensitive opto-mechanical sensor or transducer. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2024 Electronic address https://doi.org/10.1088/1361-648X/aaa8b7
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