Improvement of endurance and switching speed in Hf.sub.1-x./sub.Zr.sub.x./sub.O.sub.2./sub. thin films using a nanolaminate structure

0568238 - FZÚ 2023 RIV GB eng J - Journal Article
Jang, H. - Kashir, Alireza - Oh, S. - Hwang, H.
Improvement of endurance and switching speed in Hf_1-xZr_xO₂ thin films using a nanolaminate structure.
Nanotechnology. Roč. 33, č. 39 (2022), č. článku 395205. ISSN 0957-4484. E-ISSN 1361-6528
Institutional support: RVO:68378271
Keywords : Hf_1-x Zr_xO₂ * nanolaminate * topological domain wall * switching barrier * coercive field * endurance * switching speed
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.5, year: 2022
Method of publishing: Limited access
https://doi.org/10.1088/1361-6528/ac79bb

To improve the endurance and polarization switching speed of Hf1−xZrxO2 (HZO) ferroelectric films, we designed a 10 nm Hf0.5Zr0.5O2+ZrO2 (HZZ) nanolaminate structure. Three films with different ZrO2 interlayers thicknesses were compared to find the optimal condition to implement the effect of the topological domain wall which was proposed recently. The HZZ film were deposited by repeatedly stacking ten HZO (∼0.92 nm) and six ZrO2 (∼0.53 nm) layers, they exhibited a dramatic reduction of coercive field without an effective loss of remnant polarization. The endurance at operation voltage increased by more than 100 times compared with that of the solid solution HZO film, and the switching speed was increased by more than two times.
Permanent Link: https://hdl.handle.net/11104/0339569