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InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors

  1. 1.
    SYSNO0563785
    TitleInSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors
    Author(s) Liao, L. (CZ)
    Wu, B. (CZ)
    Kovalska, E. (CZ)
    Oliveira, F.M. (CZ)
    Azadmanjiri, J. (CZ)
    Mazánek, V. (CZ)
    Valdman, L. (CZ)
    Spejchalova, L. (CZ)
    Xu, C.Y. (CN)
    Levinský, Petr (FZU-D) RID, ORCID
    Hejtmánek, Jiří (FZU-D) RID, ORCID
    Sofer, Z. (CZ)
    Source Title Nanoscale. Roč. 14, č. 14 (2022), s. 5412-5424. - : Royal Society of Chemistry
    Document TypeČlánek v odborném periodiku
    Grant GA18-12761S GA ČR - Czech Science Foundation (CSF)
    Institutional supportFZU-D - RVO:68378271
    Languageeng
    CountryGB
    Keywords indium selenide * 2D materials * photoelectrochemical measurements
    Permanent Linkhttps://hdl.handle.net/11104/0335592
     
Number of the records: 1  

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