InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors

Liao, L.; Wu, B.; Kovalska, E.; Oliveira, F.M.; Azadmanjiri, J.; Mazánek, V.; Valdman, L.; Spejchalova, L.; Xu, C.Y.; Levinský, Petr; Hejtmánek, Jiří; Sofer, Z.

doi:https://dx.doi.org/10.1039/d1nr07150e

Number of the records: 1

InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors

1.

SYSNO ASEP	0563785
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	InSe:Ge-doped InSe van der Waals heterostructure to enhance photogenerated carrier separation for self-powered photoelectrochemical-type photodetectors
Author(s)	Liao, L. (CZ) Wu, B. (CZ) Kovalska, E. (CZ) Oliveira, F.M. (CZ) Azadmanjiri, J. (CZ) Mazánek, V. (CZ) Valdman, L. (CZ) Spejchalova, L. (CZ) Xu, C.Y. (CN) Levinský, Petr (FZU-D)_{RID, ORCID} Hejtmánek, Jiří (FZU-D)_{RID, ORCID} Sofer, Z. (CZ)
Number of authors	12
Source Title	Nanoscale. - : Royal Society of Chemistry - ISSN 2040-3364 Roč. 14, č. 14 (2022), s. 5412-5424
Number of pages	13 s.
Language	eng - English
Country	GB - United Kingdom
Keywords	indium selenide ; 2D materials ; photoelectrochemical measurements
Subject RIV	BM - Solid Matter Physics ; Magnetism
OECD category	Condensed matter physics (including formerly solid state physics, supercond.)
R&D Projects	GA18-12761S GA ČR - Czech Science Foundation (CSF)
Method of publishing	Limited access
Institutional support	FZU-D - RVO:68378271
UT WOS	000772122400001
EID SCOPUS	85127656929
DOI	10.1039/d1nr07150e
Annotation	Two-dimensional (2D) van der Waals (vdW) materials with tunable heterostructures and superior optoelectronic properties have opened a new platform for various applications, e.g., field-effect transistors, ultrasensitive photodetectors and photocatalysts. In this work, an InSe/InSe(Ge) (germanium doped InSe) vdW heterostructure is designed to improve the photoresponse performance of sole InSe in a photoelectrochemical (PEC)-type photodetector. Photoelectrochemical measurements demonstrated that this heterostructure has excellent photoresponse characteristics, including a photocurrent density of 9.8 μA cm-2, a photo-responsivity of 64 μA W-1, and a response time/recovery time of 0.128 s/0.1 s.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2023
Electronic address	https.//doi.org/10.1039/d1nr07150e

Number of the records: 1