Radiation-induced phase separation in nanostructured Hf-In-C ternary thin films under irradiation with 200 keV Ar.sup.+./sup. ion beam

Vacík, Jiří; Cannavó, Antonino; Bakardjieva, Snejana; Kupčík, Jaroslav; Lavrentiev, Vasyl; Ceccio, Giovanni; Horák, Pavel; Němeček, J.; Verna, A.; Parmeggiani, M.; Calcagno, L.; Klie, R.; Duchon, J.

doi:https://dx.doi.org/10.1080/10420150.2022.2049788

Number of the records: 1

Radiation-induced phase separation in nanostructured Hf-In-C ternary thin films under irradiation with 200 keV Ar.sup.+./sup. ion beam

1.

SYSNO ASEP	0556898
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Radiation-induced phase separation in nanostructured Hf-In-C ternary thin films under irradiation with 200 keV Ar⁺ ion beam
Author(s)	Vacík, Jiří (UJF-V)_{RID, ORCID, SAI} Cannavó, Antonino (UJF-V)_{ORCID, SAI} Bakardjieva, Snejana (UACH-T)_{SAI, RID, ORCID} Kupčík, Jaroslav (UACH-T)_{SAI, RID, ORCID} Lavrentiev, Vasyl (UJF-V)_{RID, ORCID, SAI} Ceccio, Giovanni (UJF-V)_{ORCID, RID, SAI} Horák, Pavel (UJF-V)_{RID, ORCID} Němeček, J. (CZ) Verna, A. (IT) Parmeggiani, M. (IT) Calcagno, L. (IT) Klie, R. (US) Duchon, J. (CZ)
Number of authors	13
Source Title	Radiation Effects and Defects in Solids. - : Taylor & Francis - ISSN 1042-0150 Roč. 177, 1-2 (2022), s. 137-160
Number of pages	24 s.
Publication form	Print - P
Language	eng - English
Country	GB - United Kingdom
Keywords	ion beam synthesis ; Hf-In-C nanocomposite ; Hf2InC MAX phase ; HfC0 ; (95) phase ; radiation tolerance
OECD category	Nuclear related engineering
R&D Projects	EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	GA18-21677S GA ČR - Czech Science Foundation (CSF)
Research Infrastructure	CANAM II - 90056 - Ústav jaderné fyziky AV ČR, v. v. i. CzechNanoLab - 90110 - Vysoké učení technické v Brně
Method of publishing	Limited access
Institutional support	UJF-V - RVO:61389005 ; UACH-T - RVO:61388980
UT WOS	000770467000001
EID SCOPUS	85126828743
DOI	10.1080/10420150.2022.2049788
Annotation	Thin films consisting of 17 groups of Hf/In/C multilayers cyclically alternating layers of Hf, In and C each with a thickness of 4-5 nm were synthesized by ion sputtering using a 25 keV Ar+ ion beam with 400 mu A current and targets made of pure hafnium, indium and carbon. The films were subsequently annealed in vacuum at 120 degrees C for 24 hours to induce intermixing of elements phases, their interaction, and formation of the Hf-In-C nanostructures (including the Hf2InC MAX phase). After fabrication, a part of the pristine (as deposited) samples was irradiated by 200 keV Ar+ ions at high fluences 10(15) and 10(17) cm(-2). Both samples (as prepared and irradiated) were analyzed by IBA nuclear analytical methods, as well as by AFM and TEM microscopic techniques, and by XPS and profilometry to understand the microstructural evolution. Moreover, nanoindentation analysis was performed to assess the effects of ion irradiation on the microstructure and mechanical properties of the films. The experimental results showed that thin Hf-In-C nanostructured films can be formed by ion sputtering with promising mechanical parameters. The irradiated Hf-In-C films were found to be resistant only up to a fluence of about 10(15) Ar cm(-2). At higher fluences it degrades, and Hf2InC transforms to the binary HfC0.95 phase due to sublimation of In. At 10(17) cm(-2) the original matrix (including M(2)AX) is destroyed, and instead, a mixture of MX binary phases (e.g. HfC0.95) and crystalline oxides (e.g. HfO2 and In2O3) are formed.
Workplace	Nuclear Physics Institute
Contact	Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
Year of Publishing	2023
Electronic address	https://doi.org/10.1080/10420150.2022.2049788

Number of the records: 1