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Towards an ideal high-κ HfO.sub.2./sub.–ZrO.sub.2./sub.-based dielectric
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SYSNO ASEP 0556440 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Towards an ideal high-κ HfO2–ZrO2-based dielectric Author(s) Kashir, Alireza (FZU-D) ORCID
Farahani, M.G. (CA)
Hwang, H. (KR)Number of authors 3 Source Title Nanoscale. - : Royal Society of Chemistry - ISSN 2040-3364
Roč. 13, č. 32 (2021), s. 13631-13640Number of pages 10 s. Language eng - English Country GB - United Kingdom Keywords dielectric properties of solids ; electric fields ; electronics industry ; ferroelectric films ; ferroelectricity ; Hafnium oxides ; Zirconia Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000677449700001 EID SCOPUS 85113301489 DOI 10.1039/d1nr02272e Annotation The existence of a morphotropic phase boundary (MPB) inside HfO2–ZrO2 solid solution thin films has been predicted, if it exists, it provides a new path toward an ideal silicon-compatible dielectric. Herein, we investigate the structural evolution along with the dielectric and ferroelectric behaviors of differently designed HfO2–ZrO2 thin films to engineer the density of the MPB inside the film structure and consequently, enhance the dielectric properties. Polarization vs. electric field (P–E) measurements of Hf0.25Zr0.75O2 thin films reveal ferroelectric (FE)–antiferroelectric (AFE) characteristics. For this composition,the dielectric constant εr is higher than those of FE Hf0.5Zr0.5O2 and AFE ZrO2 thin films, the difference is attributed to the formation of the MPB. To increase the density of the MPB and subsequently the dielectric properties, 10 nm Hf0.5Zr0.5O2 (FE)/ZrO2 (AFE) nanolaminates were prepared with different lamina thicknesses tL. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2023 Electronic address https://doi.org
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