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Towards an ideal high-κ HfO.sub.2./sub.–ZrO.sub.2./sub.-based dielectric
SYS 0556440 LBL 01000a^^22220027750^450 005 20230418204749.6 014 $a 85113301489 $2 SCOPUS 014 $a 000677449700001 $2 WOS 017 $a 10.1039/d1nr02272e $2 DOI 100 $a 20220408d m y slo 03 ba 101 $a eng 102 $a GB 200 1-
$a Towards an ideal high-κ HfO2–ZrO2-based dielectric 215 $a 10 s. 463 -1
$1 001 cav_un_epca*0358447 $1 011 $a 2040-3364 $e 2040-3372 $1 200 1 $a Nanoscale $v Roč. 13, č. 32 (2021), s. 13631-13640 $1 210 $c Royal Society of Chemistry 610 $a dielectric properties of solids 610 $a electric fields 610 $a electronics industry 610 $a ferroelectric films 610 $a ferroelectricity 610 $a Hafnium oxides 610 $a Zirconia 700 -1
$3 cav_un_auth*0420488 $a Kashir $b Alireza $p FZU-D $i Analýza funkčních materiálů $j Analysis of Functional Materials $y IR $z K $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0420478 $a Farahani $b M.G. $y CA 701 -1
$3 cav_un_auth*0420480 $a Hwang $b H. $y KR 856 $u https://doi.org $9 RIV
Number of the records: 1