Effect of pulsed methane gas flow on the incorporation of phosphorous in diamond

Mortet, Vincent; Taylor, Andrew; Davydova, Marina; Lamač, Marcel; Lambert, Nicolas; Elantyev, I.; Lorinčík, J.; Troadec, D.; Vronka, Marek; Potocký, Štěpán

doi:https://dx.doi.org/10.1016/j.diamond.2022.108928

Number of the records: 1

Effect of pulsed methane gas flow on the incorporation of phosphorous in diamond

1.

SYSNO ASEP	0556046
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Effect of pulsed methane gas flow on the incorporation of phosphorous in diamond
Author(s)	Mortet, Vincent (FZU-D)_{RID, ORCID} Taylor, Andrew (FZU-D)_{RID, ORCID} Davydova, Marina (FZU-D)_{RID, ORCID} Lamač, Marcel (FZU-D)_ORCID Lambert, Nicolas (FZU-D)_{ORCID, RID} Elantyev, I. (CZ) Lorinčík, J. (CZ) Troadec, D. (FR) Vronka, Marek (FZU-D)_{ORCID, RID} Potocký, Štěpán (FZU-D)_{RID, ORCID}
Number of authors	10
Article number	108928
Source Title	Diamond and Related Materials. - : Elsevier - ISSN 0925-9635 Roč. 124, April (2022)
Number of pages	6 s.
Language	eng - English
Country	CH - Switzerland
Keywords	diamond ; phosphorus doping ; optical emission spectroscopy ; PECVD
Subject RIV	BM - Solid Matter Physics ; Magnetism
OECD category	Condensed matter physics (including formerly solid state physics, supercond.)
R&D Projects	EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	GA21-03538S GA ČR - Czech Science Foundation (CSF)
Research Infrastructure	CzechNanoLab - 90110 - Vysoké učení technické v Brně
Method of publishing	Limited access
Institutional support	FZU-D - RVO:68378271
UT WOS	000790632900003
EID SCOPUS	85124897543
DOI	10.1016/j.diamond.2022.108928
Annotation	The synthesis of n-type phosphorus-doped diamond is essential for the development of diamond-based bipolar devices. Although demonstrated 20 years ago, it remains a complex problem due to low incorporation efficiency and low maximum concentrations. Previous works showed the deleterious influence of methinophosphide formation in a methane/hydrogen/phosphine plasma on the growth of phosphorous doped diamond using the chemical vapor deposition method. In this work, we investigate the effect of pulsing methane during microwave plasma enhanced chemical vapor deposition to avoid the formation of HCP and to increase phosphorus incorporation efficiency and maximum concentration in diamond.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2023
Electronic address	https://doi.org/10.1016/j.diamond.2022.108928

Number of the records: 1