Crystal growth and optical properties of Ce-doped (La,Y).sub.2./sub.Si.sub.2./sub.O.sub.7./sub. single crystal

0545158 - FZÚ 2022 RIV NL eng J - Journal Article
Horiai, Takahiko - Páterek, Juraj - Pejchal, Jan - Jarošová, Markéta - Rohlíček, Jan - Kurosawa, S. - Hanada, T. - Masao, Y. - Yamaji, A. - Satoshi, T. - Hiroki, S. - Ohashi, Y. - Kamada, K. - Yokota, Y. - Yoshikawa, A. - Nikl, Martin
Crystal growth and optical properties of Ce-doped (La,Y)₂Si₂O₇ single crystal.
Journal of Crystal Growth. Roč. 572, Oct (2021), č. článku 126252. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA MŠMT(CZ) EF18_053/0016627
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760; OP VVV - Mobility FZU 2(XE) CZ.02.2.69/0.0/0.0/18_053/0016627
Institutional support: RVO:68378271
Keywords : scintillator * crystal growth * luminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.830, year: 2021
Method of publishing: Open access with time embargo

We have grown Ce-doped (La,Y)2Si2O7 single crystal by micro-pulling-down method. The observed thermal quenching process could be characterized by the quenching temperature (T50%) of 526 K and its activation energy was determined to be 0.62 eV. It was found that the thermal quenching was caused by at least the thermal ionization and maybe also by classical thermal quenching. The light output and scintillation decay time were evaluated to be ~12,000 photons/MeV and ~42 ns, respectively.
Permanent Link: http://hdl.handle.net/11104/0321949