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Laser-induced crystallization of anodic TiO.sub.2./sub. nanotube layers

  1. 1.
    SYSNO ASEP0533549
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleLaser-induced crystallization of anodic TiO2 nanotube layers
    Author(s) Sopha, H. (CZ)
    Mirza, M. Inam (FZU-D) ORCID
    Turčičová, Hana (FZU-D) RID, ORCID
    Pavliňák, D. (CZ)
    Michalička, J. (CZ)
    Krbal, M. (CZ)
    Rodriguez-Pereira, J. (CZ)
    Hromádko, L. (CZ)
    Novák, Ondřej (FZU-D) RID, ORCID
    Mužík, Jiří (FZU-D) ORCID
    Smrž, Martin (FZU-D) RID, ORCID
    Kolíbalová, E. (CZ)
    Goodfriend, Nathan (FZU-D) ORCID
    Bulgakova, Nadezhda M. (FZU-D) ORCID
    Mocek, Tomáš (FZU-D) RID, ORCID, SAI
    Macák, J. M. (CZ)
    Number of authors16
    Source TitleRSC Advances. - : Royal Society of Chemistry
    Roč. 10, č. 37 (2020), s. 22137-22145
    Number of pages9 s.
    Languageeng - English
    CountryGB - United Kingdom
    Keywordscrystallization ; TiO2 ; nanotube ; TNT ; X-ray diffraction ; HRTEM
    Subject RIVBH - Optics, Masers, Lasers
    OECD categoryOptics (including laser optics and quantum optics)
    R&D ProjectsEF15_003/0000445 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    EF15_006/0000674 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    LO1602 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    LM2015086 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Method of publishingOpen access
    Institutional supportFZU-D - RVO:68378271
    UT WOS000542724200048
    EID SCOPUS85086805974
    DOI10.1039/d0ra02929g
    AnnotationIn this study, crystallization of amorphous TiO2 nanotube (TNT) layers upon optimized laser annealing is shown. The resulting anatase TNT layers do not show any signs of deformation or melting. The crystallinity of the laser annealed TNT layers was investigated using X-ray diffraction, Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM). The study of the (photo-) electrochemical properties showed that the laser annealed TNT layers were more defective than conventional TNT layers annealed in a muffle oven at 400 C, resulting in a higher charge recombination rate and lower photocurrent response. However, a lower overpotential for hydrogen evolution reaction was observed for the laser annealed TNT layer compared to the oven annealed TNT layer.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2021
    Electronic addresshttp://hdl.handle.net/11104/0311915
Number of the records: 1  

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