Transferless Inverted graphene/silicon heterostructures prepared by plasma-enhanced chemical vapor deposition of amorphous silicon on CVD graphene

Müller, Martin; Bouša, Milan; Hájková, Zdeňka; Ledinský, Martin; Fejfar, Antonín; Drogowska-Horna, Karolina A.; Kalbáč, Martin; Frank, Otakar

doi:https://dx.doi.org/10.3390/nano10030589

Number of the records: 1

Transferless Inverted graphene/silicon heterostructures prepared by plasma-enhanced chemical vapor deposition of amorphous silicon on CVD graphene

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SYSNO ASEP	0531897
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Transferless Inverted graphene/silicon heterostructures prepared by plasma-enhanced chemical vapor deposition of amorphous silicon on CVD graphene
Author(s)	Müller, Martin (FZU-D)_{RID, ORCID} Bouša, Milan (UFCH-W)_{RID, ORCID} Hájková, Zdeňka (FZU-D)_{RID, ORCID} Ledinský, Martin (FZU-D)_{RID, ORCID, SAI} Fejfar, Antonín (FZU-D)_{RID, ORCID, SAI} Drogowska-Horna, Karolina A. (UFCH-W) Kalbáč, Martin (UFCH-W)_{RID, ORCID} Frank, Otakar (UFCH-W)_{RID, ORCID}
Number of authors	8
Article number	589
Source Title	Nanomaterials. - : MDPI Roč. 10, č. 3 (2020), s. 1-10
Number of pages	10 s.
Language	eng - English
Country	CH - Switzerland
Keywords	silicon ; graphene ; heterostructure ; CDV
Subject RIV	BM - Solid Matter Physics ; Magnetism
OECD category	Condensed matter physics (including formerly solid state physics, supercond.)
Subject RIV - cooperation	J. Heyrovsky Institute of Physical Chemistry - Physical ; Theoretical Chemistry
R&D Projects	EF16_026/0008382 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	GA17-18702S GA ČR - Czech Science Foundation (CSF)
	EF16_013/0001821 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	LM2018110 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
Method of publishing	Open access
Institutional support	FZU-D - RVO:68378271 ; UFCH-W - RVO:61388955
UT WOS	000526090400189
EID SCOPUS	85082713590
DOI	10.3390/nano10030589
Annotation	The heterostructures of two-dimensional (2D) and three-dimensional (3D) materials represent one of the focal points of current nanotechnology research and development. From an application perspective, the possibility of a direct integration of active 2D layers with exceptional optoelectronic and mechanical properties into the existing semiconductor manufacturing processes is extremely appealing. However, for this purpose, 2D materials should ideally be grown directly on 3D substrates to avoid the transferring step, which induces damage and contamination of the 2D layer. Alternatively, when such an approach is difficult-as is the case of graphene on noncatalytic substrates such as Si-inverted structures can be created, where the 3D material is deposited onto the 2D substrate. In the present work, we investigated the possibility of using plasma-enhanced chemical vapor deposition (PECVD) to deposit amorphous hydrogenated Si (a-Si:H) onto graphene resting on a catalytic copper foil. The resulting stacks created at different Si deposition temperatures were investigated by the combination of Raman spectroscopy (to quantify the damage and to estimate the change in resistivity of graphene), temperature-dependent dark conductivity, and constant photocurrent measurements (to monitor the changes in the electronic properties of a-Si:H). The results indicate that the optimum is 100 degrees C deposition temperature, where the graphene still retains most of its properties and the a-Si:H layer presents high-quality, device-ready characteristics.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2021
Electronic address	http://hdl.handle.net/11104/0310529

Number of the records: 1