Ferromagnetic properties of MnSix and MnGex thin layers prepared by pulsed laser ablation.

Koštejn, Martin; Fajgar, Radek; Dřínek, Vladislav; Jandová, Věra; Kupčík, Jaroslav; Huber, S.; Mikysek, Petr

doi:https://dx.doi.org/10.1016/j.matchemphys.2020.123105

Number of the records: 1

Ferromagnetic properties of MnSix and MnGex thin layers prepared by pulsed laser ablation.

1.

SYSNO ASEP	0524022
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Ferromagnetic properties of MnSix and MnGex thin layers prepared by pulsed laser ablation.
Author(s)	Koštejn, Martin (UCHP-M)_{RID, SAI, ORCID} Fajgar, Radek (UCHP-M)_{RID, ORCID, SAI} Dřínek, Vladislav (UCHP-M)_{RID, ORCID, SAI} Jandová, Věra (UCHP-M)_{RID, ORCID, SAI} Kupčík, Jaroslav (UCHP-M)_{RID, ORCID, SAI} Huber, S. (CZ) Mikysek, Petr (GLU-S)_{SAI, ORCID}
Article number	123105
Source Title	Materials Chemistry and Physics. - : Elsevier - ISSN 0254-0584 Roč. 251, SEP 1 (2020)
Number of pages	8 s.
Language	eng - English
Country	CH - Switzerland
Keywords	ferromagnetic material ; thin layer ; crystalline nanoparticles
Subject RIV	CF - Physical ; Theoretical Chemistry
OECD category	Physical chemistry
Subject RIV - cooperation	Institute of Geology - Solid Matter Physics ; Magnetism
Method of publishing	Open access with time embargo (01.09.2022)
Institutional support	UCHP-M - RVO:67985858 ; GLU-S - RVO:67985831
UT WOS	000549319900043
EID SCOPUS	85083815527
DOI	10.1016/j.matchemphys.2020.123105
Annotation	Pulsed laser deposition and post-annealing was used for the preparation of MnSix and MnGex thin layers in order to study the increase of ferromagnetic properties related to crystalline phases. As-prepared samples were mainly amorphous with Mn concentration ranging from 20 to 50 at.%. Annealing of MnSix and MnGex layers at 600 °C and 350 °C, respectively, led to the formation of crystalline nanoparticles with the diameter from 10 to 20 nm. Magnetization measured at 300 K showed that the annealed MnSix layers exhibited magnetization of 0.07 μB/Mn atom. Magnetization of annealed MnGex layers varied depending on Mn concentration from 0.1 μ B/Mn atom (30 at.%) to 0.4 μ B/Mn atom (47 at.%). Resistivity measurements of the annealed layers showed values typical for highly degenerate silicon (~10-3.Ω.m) and germanium (~10-5.Ω.m). Temperature dependence of resistivity revealed that, after annealing, only MnSix layers with lower Mn concentration preserved a semiconducting behaviour.
Workplace	Institute of Chemical Process Fundamentals
Contact	Eva Jirsová, jirsova@icpf.cas.cz, Tel.: 220 390 227
Year of Publishing	2021
Electronic address	http://hdl.handle.net/11104/0308907

Number of the records: 1