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Homogeneous Resistive Switching in Individual ZnO Nanorod p-n Junctions

  1. 1.
    Tiagulskyi, Stanislav - Yatskiv, Roman - Faitová, Hana - Vaniš, Jan - Grym, Jan
    Homogeneous Resistive Switching in Individual ZnO Nanorod p-n Junctions.
    International Semiconductor Conference (CAS 2019). New York: IEEE, 2019 - (Brezeanu, G.), s. 289-292. ISBN 978-1-7281-1888-8. ISSN 1545-827X.
    [42nd International Semiconductor Conference (CAS). Sinaia (RO), 09.10.2019-11.10.2019]
    OECD category: Electrical and electronic engineering
    http://hdl.handle.net/11104/0307889
Number of the records: 1  

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