Number of the records: 1
Homogeneous Resistive Switching in Individual ZnO Nanorod p-n Junctions
- 1.Tiagulskyi, Stanislav - Yatskiv, Roman - Faitová, Hana - Vaniš, Jan - Grym, Jan
Homogeneous Resistive Switching in Individual ZnO Nanorod p-n Junctions.
International Semiconductor Conference (CAS 2019). New York: IEEE, 2019 - (Brezeanu, G.), s. 289-292. ISBN 978-1-7281-1888-8. ISSN 1545-827X.
[42nd International Semiconductor Conference (CAS). Sinaia (RO), 09.10.2019-11.10.2019]
OECD category: Electrical and electronic engineering
http://hdl.handle.net/11104/0307889
Number of the records: 1