Number of the records: 1
Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure
- 1.
SYSNO 0502374 Title Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure Author(s) Hájek, František (FZU-D) ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Slavická Zíková, Markéta (FZU-D)Source Title Proceedings of the 8th Student scientific conference of solid state engineering and materials. S. 42-45. - Praha : České vysoké učení technické v Praze, 2018 / Dragounová K. ; Koubský T. ; Kalvoda L. ; Čapek J. ; Trojan K. ; Kolenko P. Conference Student scientific conference of solid state engineering and materials /8./, 17.09.2018 - 21.09.2018, Sedliště Document Type Konferenční příspěvek (zahraniční konf.) Institutional support FZU-D - RVO:68378271 Language eng Country CZ Keywords nitrides * quantum wells * luminescence * semiconductor doping Permanent Link http://hdl.handle.net/11104/0294317
Number of the records: 1