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Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure
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SYSNO ASEP 0502374 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure Author(s) Hájek, František (FZU-D) ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Slavická Zíková, Markéta (FZU-D) ORCIDNumber of authors 4 Source Title Proceedings of the 8th Student scientific conference of solid state engineering and materials. - Praha : České vysoké učení technické v Praze, 2018 / Dragounová K. ; Koubský T. ; Kalvoda L. ; Čapek J. ; Trojan K. ; Kolenko P. - ISBN 978-80-01-06511-2 Pages s. 42-45 Number of pages 4 s. Publication form Online - E Action Student scientific conference of solid state engineering and materials /8./ Event date 17.09.2018 - 21.09.2018 VEvent location Sedliště Country CZ - Czech Republic Event type CST Language eng - English Country CZ - Czech Republic Keywords nitrides ; quantum wells ; luminescence ; semiconductor doping Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) Institutional support FZU-D - RVO:68378271 Annotation Luminescence of InGaN/GaN multiple quantum well (MQW) structure is strongly affected by spontaneous and piezoelectric polarizations. To suppress them, doping with shallow impurities (e. g. Si) can be used. This works presents the effects of Si doping in different layers around the MQW area. On the basis of photoluminescence and cathodoluminescence measurements and band structure simulation, the piezoelectric field is most efficiently reduced when both layers under and over MQW area are Si doped.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2019 Electronic address html: https://kiplwww.fjfi.cvut.cz/drupal7/sites/default/files/Sbornik_SSCSSPM8_2018_FinalPublished_compressed.pdf
Number of the records: 1